Would you please correct it
These values are higher than those obtained by graphene-MoS2 phototransistor, lithographic-patterned GNR and few-layer-based photodetectors such as MoS2.
The resistance of channels was increased with increasing the GNR stacks’ surface area.
.........., combining optical lithography with written electrodes using electron-beam.
Thanks
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1
Would you please correct it
These values are higher than those obtained by graphene-MoS2 phototransistor, lithographic-patterned GNR and few-layer-based photodetectors such as MoS2.
The resistance of channels increased with increasing the GNR stacks’ surface area.
.........., combining optical lithography with written electrodes using electron-beam.
Thanks
0
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0
Would you please correct it
These values are higher than those obtained by graphene-MoS2 phototransistor, lithographic-patterned GNR and a few-layer-based photodetectors such as MoS2.
The resistance of channels was increased with increasing the GNR stacks’ surface area.
.........., combining optical lithography with written electrodes using electron-beam.
Thanks
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